SK Hynix Reveals 321-Layer 3D NAND Flash Memory
SK hynix unveiled samples of the world’s first 3D NAND flash memory with 321 layers at the Flash Memory Summit 2023. Such chips will be in demand in the future when smart assistants are everywhere.
The 321-layer flash memory chips are based on three-bit memory cells (TLC). The capacity of one chip will be 1 Tbit. The current 238-layer 3D NAND of the company has half the capacity – 512 Gbps. Moving from 238-layer memory to 321-layer memory per bit will increase the capacity yield per silicon wafer by 59%.
The first report of SK hynix specialists on the development of 300-layer memory was held in March of this year at the ISSCC 2023 conference. From the documents presented then, it follows that 300-layer SK Hynix microcircuits will also receive an improved architecture, which inevitably follows an increase in the number of layers and an increase in the number of connections, as well as slightly modified control and programming signals. Taken together, this will increase the bandwidth of 3D NAND memory from 164 MB / s to 194 MB / s. The energy efficiency of solutions will also increase due to higher recording density.
The developer noted that he had not yet fully completed the development of a new memory, but promised to finish it next year, and mass production of new items will be launched in the first half of 2025. New technologies will increase the throughput of 321-layer flash memory up to 194 MB / s. Also, the chips will become more energy efficient due to the high recording density.
