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SK Hynix Develops The World’s Fastest HBM3e Memory

South Korean chipmaker SK hynix announced the successful development of the world’s most productive memory chips HBM3e. Currently, the company is supplying prototypes to its customers, including Nvidia, and is preparing to start mass production. It is scheduled for the first half of next year.

HBM (High Bandwidth Memory) is a high-speed memory, which is a stack of vertically connected several DRAM chips, which provides a significant increase in data processing speed compared to conventional DRAM chips. HBM3E is an improved version of the fifth generation HBM3 memory that replaces the previous generations: HBM, HBM2, HBM2E and HBM3.

According to SK hynix, the new product not only meets the highest industry standards for speed, a key memory parameter for AI tasks, but also in other categories, including capacity, heat dissipation and usability. The HBM3E is capable of processing data at speeds up to 1.15 TB/s, which is equivalent to transferring more than 230 full-length movies in Full HD resolution of 5 GB each per second.

In addition, the HBM3E has 10% better heat dissipation thanks to the advanced Advanced Mass Reflow Molded Underfill (MR-MUF2) technology. The new memory also provides backward compatibility, which will allow it to be used in existing accelerators that were created under HBM3.

According to estimates, the share of SK hynix in the global HBM memory market at the end of 2022 was approximately 50%.

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